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Investigation of silicon rich nitride (SiRN) phase shifting mask material for 193nm lithography
Conference presentation

Investigation of silicon rich nitride (SiRN) phase shifting mask material for 193nm lithography

Z-T Jiang, T. Yamaguchi, M. Aoyama and L. Asinovsky
3rd International Symposium on 193nm Lithography (Onuma, Hokkaido, Japan, 29/06/1997–02/07/1997)
1997

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