Charge Transport and Hall Effect Measurements in Semiconductors

Seema Seema Morab

Charge transportation is primarily responsible for generation of electrical currents in any electronic device. The devices gain high efficiency only if the charge carrier generation rate is high with minimum recombination losses. The physics of charge transport in conductors and semiconductors vary according to the material, properties, and concentration of charge carriers that constitute the electric current. Addition of dopants to the device material with an increase in levels of doping alters the charge transport mechanism in the device and its performance. In addition, application of Lorentz force across the device material also alters the charge transport process in the device, leading to Hall effect. Consequently, key to improving device performance is better optimisation and understanding of charge transport in the device material. To achieve this, a new drift-diffusion-recombination-model has been developed for two-dimensional semiconductor devices to determine the effects of various charge transport parameters on device performance, such as the current and voltage, concentration and mobility of charge carriers, presence of impurities and defects, carrier generation and recombination, and strength of the applied electric and magnetic fields. This model is used to interpret and design charge transport through the Hall effect, which applies to operational semiconductor devices. By understanding the complex interaction between these various parameters, device performance can be optimised for specific applications. For instance, increasing the concentration of charge carriers can improve conductivity, while reducing impurities can increase device efficiency. Additionally, adjusting the strength of applied electric and magnetic fields can alter device behaviour in significant ways. Overall, a deep understanding of these parameters is essential for developing cutting-edge semiconductor-technology that meets the demands of modern electronics applications viii with low costs. The implications of these findings provide new insights into improving device performance by understanding the notions of Hall effect and charge transport in low-mobility organic semiconductors. Keywords: Semiconductors, Hall Effect, Charge transport, Carrier recombination

Charge Transport and Hall Effect Measurements in Semiconductors

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