Doctoral Thesis
The InP surface and its native oxide
Doctor of Philosophy (PhD), Murdoch University
1991
Abstract
The properties of InP are such that it has a wide range of applicability in the fabrication of electronic devices. The characteristics of the surface and its native oxide play a dominant role in the behaviour and performance of the device. The effect of surface treatments on the evolution of surface states on the (110) and (100) planes are investigated.
The electronic characteristics of the surfaces are investigated by surface photovoltage spectroscopy and contact potential difference measurements. These techniques provide information on the nature and densities of surface states and their role in band bending, Fermi level pinning, surface barrier height and the work function of the surface. The information obtained is used to explain the electrical behaviour such as drifts, hysteresis and instabilities observed in electronic devices based on InP.
The chemical composition of the native oxide is determined by Auger electron spectroscopy. The thermodynamics and kinetics of the native oxide formation are examined and the interaction of the free InP surface with the oxide is investigated. The chemical origin of the surface states are identified.
The results are analysed and compared with data appearing in the literature. A model for the oxidation mechanism of the InP surface is proposed. A fundamental understanding of the structure of the InP surface is gained in this study and is considered for improved surface preparation techniques.
Details
- Title
- The InP surface and its native oxide
- Authors/Creators
- Terencio Donato Lacuesta
- Contributors
- Stephen Thurgate (Supervisor)
- Awarding Institution
- Murdoch University; Doctor of Philosophy (PhD)
- Identifiers
- 991005546030007891
- Murdoch Affiliation
- School of Mathematical and Physical Sciences
- Language
- English
- Resource Type
- Doctoral Thesis
Metrics
30 File views/ downloads
149 Record Views