A Self-Powered heterojunction photodetector based on a PbS nanostructure grown on porous silicon substrate

Z.A. Bashkany; I.K. Abbas; M.A. Mahdi; H.F. Al-Taay; P. Jennings

doi:10.1007/s12633-016-9462-4

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A Self-Powered heterojunction photodetector based on a PbS nanostructure grown on porous silicon substrate

Journal article

Peer reviewed

A Self-Powered heterojunction photodetector based on a PbS nanostructure grown on porous silicon substrate

Z.A. Bashkany, I.K. Abbas, M.A. Mahdi, H.F. Al-Taay and P. Jennings

Silicon, Vol.10(2), pp.403-411

2018

DOI: https://doi.org/10.1007/s12633-016-9462-4

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Abstract

A photosensor was fabricated based on a lead sulfide (PbS)/porous silicon (Ps) heterojunction. An n-type Si(100) single crystal wafer was used to prepare the Ps using a photo-electrochemical etching method. A PbS nanocrystalline thin film was deposited onto the Ps substrate using a microwave-assisted chemical bath deposition (MA-CBD) technique. The current-voltage (I-V) characteristics of the fabricated PbS/Ps photosensor were studied under dark, 10 mW/cm2, 20 mW/cm2, and 40 mW/cm2 illumination by light. The device shows good response to light even without a bias voltage and the sensitivity when the applied voltage is 0 V decreased from 5.66 × 104 % under 10 mW/cm2 to 1.8 × 103 % when the device is illuminated by 40 mW/cm2 intensity light. The fabricated PbS/Ps photdetector shows a faster response to light of 0.43 sec when the applied voltage and intensity of light were 1.0 V and 40 mW/cm2, respectively. Moreover, the fastest fall time was 0.4 sec obtained for the device that was exposed to 40 mW/cm2 light and biased by 0.75 V.

Details

Title: A Self-Powered heterojunction photodetector based on a PbS nanostructure grown on porous silicon substrate
Authors/Creators: Z.A. Bashkany (Author/Creator) - University of Mosul
I.K. Abbas (Author/Creator) - University of Mosul
M.A. Mahdi (Author/Creator) - University of Basrah
H.F. Al-Taay (Author/Creator) - University of Baghdad
P. Jennings (Author/Creator) - Murdoch University
Publication Details: Silicon, Vol.10(2), pp.403-411
Publisher: Springer
Identifiers: 991005545421107891
Murdoch Affiliation: School of Engineering and Information Technology
Language: English
Resource Type: Journal article

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Collaboration types: Domestic collaboration; International collaboration
Citation topics: 2 Chemistry; 2.67 Nanoparticles; 2.67.301 Quantum Dots
Web Of Science research areas: Chemistry, Physical; Materials Science, Multidisciplinary
ESI research areas: Materials Science