Journal article
A Study of the Effects of Annealing and Outgassing on Hydrogenated Amorphous Silicon
Thin Solid Films, Vol.310(1-2), pp.156-160
1997
Abstract
Annealing and outgassing of thin films of hydrogenated amorphous silicon (a-Si:H) are shown to produce major structural changes in the material. Outgassing can occur in three stages with thresholds at 350°C, 450°C and 575°C corresponding to conversion of SiH3 groups to SiH2 and SiH; conversion of SiH2 groups to Si and SiH; and conversion of SiH to Si respectively. Heating to 575°C also appears to remove most of the hydrogen from vacancies and defects in the material. Such heat treatments could be useful for improving the stability of thin film a-Si:H devices.
Details
- Title
- A Study of the Effects of Annealing and Outgassing on Hydrogenated Amorphous Silicon
- Authors/Creators
- P.J. Jennings (Author/Creator)J.C.L. Cornish (Author/Creator)B.W. Clare (Author/Creator)G. Hefter (Author/Creator)D.J. Santjojo (Author/Creator)
- Publication Details
- Thin Solid Films, Vol.310(1-2), pp.156-160
- Publisher
- Elsevier BV
- Identifiers
- 991005540772207891
- Copyright
- Copyright © 1997 Published by Elsevier B.V.
- Murdoch Affiliation
- School of Chemical and Mathematical Science
- Language
- English
- Resource Type
- Journal article
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