Journal article
Dopant ion implantation simulations in 4H-Silicon Carbide
Modelling and Simulation in Materials Science and Engineering, Vol.12(6), pp.1139-1146
2004
Abstract
Many modern semiconductor fabrication techniques employ ion implantation technology to produce doped device structures. In some cases, implanted structures are used as an adjunct to standard commercial processes of thermal diffusion. The incorporation of dopants into 4H-Silicon Carbide requires the exclusive use of ion implantation technology. Predicting the profile of ion implanted structures is a key factor in the design topology of any implanted semiconductor device. The prediction of an ion implanted device topology can be performed using a variety of computer simulation tools. Results of typical ion implantation regimes using specific computer simulation tools are reviewed in this paper. The results from these implant profile simulation tools may be used as input data to further device simulation modelling. Predictive models for the effects of post-implantation processing, such as high temperature annealing, are also discussed in this paper.
Details
- Title
- Dopant ion implantation simulations in 4H-Silicon Carbide
- Authors/Creators
- G.J. Phelps (Author/Creator)
- Publication Details
- Modelling and Simulation in Materials Science and Engineering, Vol.12(6), pp.1139-1146
- Publisher
- IOP Publishing Ltd
- Identifiers
- 991005543953307891
- Murdoch Affiliation
- Murdoch University
- Language
- English
- Resource Type
- Journal article
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- Citation topics
- 5 Physics
- 5.31 Silicon Systems
- 5.31.533 SiC Power Devices
- Web Of Science research areas
- Materials Science, Multidisciplinary
- Physics, Applied
- ESI research areas
- Materials Science