Logo image
Effect of charge on bond strength in hydrogenated amorphous silicon
Journal article   Peer reviewed

Effect of charge on bond strength in hydrogenated amorphous silicon

B.W. Clare, G. Talukder, P.J. Jennings, J.C.L. Cornish and G.T. Hefter
Journal of Computational Chemistry, Vol.15(6), pp.644-652
1994
url
Link to Published Version *Subscription may be requiredView

Abstract

We have studied the effect of excess charge on the bond strength in the silanes SiH4 and Si2H6 to assess whether charge trapping in a solid-state lattice might promote the technologically important photodegradation of amorphous silicon alloys (the Staebler-Wronski effect). The calculations indicate that both positive and negative charges reduce the strength of SiH and SiSi bonds considerably, to the point where they may be broken easily by visible or even infrared light.

Details

Metrics

InCites Highlights

These are selected metrics from InCites Benchmarking & Analytics tool, related to this output

Citation topics
2 Chemistry
2.15 Physical Chemistry
2.15.3 Quantum Chemistry
Web Of Science research areas
Chemistry, Multidisciplinary
ESI research areas
Chemistry
Logo image