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Effects of gas ring position and mesh introduction on film quality and thickness uniformity
Journal article   Peer reviewed

Effects of gas ring position and mesh introduction on film quality and thickness uniformity

S. Hong, E. Kim, Z-T Jiang, B-S Bae, K. No, S. Lim, S-G Woo and Y-B Koh
Materials Science and Engineering B, Vol.45(1-3), pp.98-101
1997
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Abstract

Chromium oxide films were deposited using DC reactive magnetron sputtering system with different gasring positions. It was found that the film quality was improved, while film thickness deviation over 2′' area of silica wafer increased, as the distance between the target and the gasring increased. To improve both the film quality and the thickness uniformity, a method of mesh insertion was tried and verified to meet the purpose. Introduction of mesh produced stable plasma and resulted in more uniform and smooth planar film without any contamination from the mesh. These phenomena were explained in terms of gettering and scattering effects of the mesh.

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Collaboration types
Industry collaboration
Domestic collaboration
Citation topics
5 Physics
5.188 Deposition, Hardening & Coating
5.188.318 Nitride Coatings
Web Of Science research areas
Materials Science, Multidisciplinary
Physics, Condensed Matter
ESI research areas
Materials Science
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