Factors determining the resistive switching behavior of transparent InGaZnO‐Based memristors

F. Qin; Y. Zhang; H. Park; C.S. Kim; D.H. Lee; Z-T Jiang; J. Park; K. No; H.W. Song; S. Lee

doi:10.1002/pssr.202200075

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Factors determining the resistive switching behavior of transparent InGaZnO‐Based memristors

Journal article

Peer reviewed

Factors determining the resistive switching behavior of transparent InGaZnO‐Based memristors

F. Qin, Y. Zhang, H. Park, C.S. Kim, D.H. Lee, Z-T Jiang, J. Park, K. No, H. Park, H.W. Song, …

Physica status solidi (RRL) – Rapid Research Letters, Vol.16(7), 2200075

2022

DOI: https://doi.org/10.1002/pssr.202200075

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Abstract

The overarching goal herein is to identify the factors dominating the performance of a-IGZO-based memristors. Despite the highest on/off ratio, greater than 104 with a preferred minimal set/reset bias achieved from a-IGZO-based memristors, it is observed that the switching performance and stability/reliability of the devices is significantly dominated by the VO·· density and metallization material, depending on their reactivity with IGZO. As the first governing factor, ensuring optimal VO·· concentration in the switching layer IGZO (VO··/OOx ratio 24.3% in this study) is crucial to obtain the tractable formation and rupture of conduction filament. Neither higher nor lower VO·· density than the optimized results in detrimental reliability issues, which may be ascribed to an uncontrollable filament in an abundant vacancy environment or a weak conducting path, respectively. As the second governing mechanism determining the memristor performance and reliability, it is suggested that metallization materials need to be carefully selected based on the thermodynamic redox potential and interfacial stability of the metallization material with IGZO. Metallization materials with larger reduction potential and interfacial stability are found to yield higher switching on/off ratio and greater device performance reliability.

Details

Title: Factors determining the resistive switching behavior of transparent InGaZnO‐Based memristors
Authors/Creators: F. Qin (Author/Creator) - Purdue University West Lafayette
Y. Zhang (Author/Creator) - Purdue University West Lafayette
H. Park (Author/Creator) - Kyungpook National University
C.S. Kim (Author/Creator)
D.H. Lee (Author/Creator) - Purdue University West Lafayette
Z-T Jiang (Author/Creator) - Murdoch University
J. Park (Author/Creator) - Kyungpook National University
K. No (Author/Creator) - Department of Materials Science and Engineering KAIST Daejeon 34141 Republic of Korea
H. Park (Author/Creator) - Kyungpook National University
H.W. Song (Author/Creator)
S. Lee (Author/Creator) - Purdue University West Lafayette
Publication Details: Physica status solidi (RRL) – Rapid Research Letters, Vol.16(7), 2200075
Publisher: Wiley-VCH GmbH
Identifiers: 991005546341007891
Murdoch Affiliation: College of Science, Health, Engineering and Education
Language: English
Resource Type: Journal article

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Collaboration types: Domestic collaboration; International collaboration
Citation topics: 5 Physics; 5.310 Resistive Switching; 5.310.1164 Resistive Switching
Web Of Science research areas: Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
ESI research areas: Physics