Fluorinated silicon nitride film for the bottom antireflective layer in quarter micron optical lithography

B-H Jun; S-S Han; J.S. Lee; Y-B Kim; H-Y Kang; Y-B Koh; Z-T Jiang; B-S Bae; K. No

doi:10.1088/0268-1242/12/7/026

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Fluorinated silicon nitride film for the bottom antireflective layer in quarter micron optical lithography

Journal article

Peer reviewed

Fluorinated silicon nitride film for the bottom antireflective layer in quarter micron optical lithography

B-H Jun, S-S Han, J.S. Lee, Y-B Kim, H-Y Kang, Y-B Koh, Z-T Jiang, B-S Bae and K. No

Semiconductor Science and Technology, Vol.12(7), pp.921-926

1999

DOI: https://doi.org/10.1088/0268-1242/12/7/026

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Abstract

Fluorinated silicon nitride thin film as a bottom antireflective layer (BARL) material, being suitable for line-patterning in 0.25 _m KrF excimer laser (248 nm) lithography, has been studied by film fabrication/characterization and computer simulation. Three-dimensional reflectance simulation process suggests that the 0% reflectance between photoresist (PR) and BARL can be achieved by selecting proper combinations of film optical properties such as refractive index (n), extinction coefficient (k ) and thickness (d ). For the PR/300 °A BARL/c-Si or PR/300 °A BARL/W-Si structure at a wavelength of 248 nm, the simulation process reveals that nearly 0% reflectance could be obtained when the n and k values of the film are 2.109 and 0.68 or 2.052 and 0.592 respectively. The fluorinated silicon nitride films prepared by ICP enhanced CVD have been evaluated with the variations of NF3 flow rates under the two conditions of SiH4:N2 = 2 : 15 and 3:20 (sccm). The film n and k values at 248 nm vary in the ranges of 1.665–2.352 and 0.007–0.695 respectively, depending on gas flow ratio. As it is very sensitive to the film thickness, the reflectance could be reduced, using compoter simulation, to almost 0% by changing the film thickness. Furthermore, the ARL performance for 0.25 _m line/space processed by the KrF excimer laser stepper and the stripping ability/selectivity show this material to be a superior candidate for deep-UV microlithography applications.

Details

Title: Fluorinated silicon nitride film for the bottom antireflective layer in quarter micron optical lithography
Authors/Creators: B-H Jun (Author/Creator) - Korea Advanced Institute of Science and Technology
S-S Han (Author/Creator) - Korea Advanced Institute of Science and Technology
J.S. Lee (Author/Creator) - Korea Advanced Institute of Science and Technology
Y-B Kim (Author/Creator) - Samsung (South Korea)
H-Y Kang (Author/Creator) - Samsung (South Korea)
Y-B Koh (Author/Creator) - Samsung (South Korea)
Z-T Jiang (Author/Creator) - Korea Advanced Institute of Science and Technology
B-S Bae (Author/Creator) - Korea Advanced Institute of Science and Technology
K. No (Author/Creator) - Korea Advanced Institute of Science and Technology
Publication Details: Semiconductor Science and Technology, Vol.12(7), pp.921-926
Publisher: Institute of Physics
Identifiers: 991005543983207891
Murdoch Affiliation: Murdoch University
Language: English
Resource Type: Journal article

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Collaboration types: Industry collaboration; Domestic collaboration
Citation topics: 5 Physics; 5.295 Lithography; 5.295.709 EUV Lithography
Web Of Science research areas: Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter
ESI research areas: Physics