SiC MOSFET modules are widely used for bidirectional wireless charging of electric vehicles. However, prolonged use can result in bond wire faults, leading to reliability issues. To address this problem, a non-contact bond wire monitoring method that can be carried out using the charging coil of the wireless charging device is proposed. Here, two monitoring loops are constructed based on the circuit topology, and their impedance magnitudes are measured on the charging coil to avoid the influence of battery voltage on monitoring results. To detect the bond wire condition, the impedance magnitude difference of the two monitoring loops is chosen as an indicator, which is very sensitive to the bond wire lift-off. However, the monitoring results may be influenced by the aging of resonant capacitors and the offset of the charging coil. In particular, the influence of the coil offset is significant. To mitigate this effect, a prognostic parameter calibration method is proposed. Experimental results confirm the effectiveness of the proposed method, which provides a promising solution for the reliable and safe operation of SiC MOSFET modules in wireless charging devices.
Details
Title
Non-contact and anti-interference diagnosis of SiC MOSFET module bond wire faults for EV wireless charging device
Authors/Creators
Mingyao Ma
Ning Wang - Ministry of Agriculture and Rural Affairs
Hanyu Wang
Weisheng Guo
Hai Wang - Murdoch University, Centre for Water, Energy and Waste
Publication Details
IET Power Electronics, Vol.16(15), pp.2449-2461
Publisher
John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology.