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Optical property simulation of single-layer halftone phaseshifting masks for DUV microlithography
Journal article   Peer reviewed

Optical property simulation of single-layer halftone phaseshifting masks for DUV microlithography

Z-T Jiang, S. Hong, E. Kim, B-S Bae, K No, C.K. Hwangbo, S-C Lim, S-G Woo and Y-B Koh
Semiconductor Science and Technology, Vol.11(10), pp.1450-1455
1996
DOI: https://doi.org/10.1088/0268-1242/11/10/016
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Abstract

An optical simulation for a single-layer halftone phaseshifting mask (SLHTPSM) has been established and verified by the experimental data from several different sources. This simulation is suitable for a wide lithography exposure wavelength; for example, i-line, KrF and ArF etc. Theoretical analyses give some important tendencies of the optical parameters such as refractive index, extinction coefficient and film thickness. The optimum SLHTPSM structures for KrF (248 nm) have been derived by the simulation processes, which include the optimized combinations of extinction coefficient/refractive index and film thickness/refractive index achieved to deliver the 5%, 10% and 20% transmittance and 180 degrees phaseshifting. The simulation shows the film refractive index to be in the region of 1.7 - 3. The simulation program also provides guidance for the SLHTPSM fabrications.

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7 Times Cited - Web of Science

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Collaboration types
Industry collaboration
Domestic collaboration
Citation topics
5 Physics
5.295 Lithography
5.295.709 EUV Lithography
Web Of Science research areas
Engineering, Electrical & Electronic
Materials Science, Multidisciplinary
Physics, Condensed Matter
ESI research areas
Physics
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