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Preparation and characterization of silicon nanowires catalyzed by aluminum
Journal article   Open access   Peer reviewed

Preparation and characterization of silicon nanowires catalyzed by aluminum

H.F. Al-Taay, M.A. Mahdi, D. Parlevliet, Z. Hassan and P. Jennings
Physica E: Low-dimensional Systems and Nanostructures, Vol.48, pp.21-28
2013
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Abstract

Silicon nanowires (SiNWs) were grown on indium tin oxide coated glass substrates by a pulsed plasma-enhanced chemical vapor deposition (PPECVD) method using aluminum as a catalyst. The thin films of the catalyst, with thicknesses ranging from 10 nm to 100 nm, were deposited on the substrates by thermal evaporation. The effect of the thickness of the thin film catalyst on the morphology of the silicon nanowires was investigated. The surface morphology study of the prepared wires showed that the modal wire diameter increased as the catalyst film thickness increased. The X-ray diffraction patterns of the prepared silicon nanowires had no silicon peaks, indicating that the wires had low crystallinity. The photoluminescence spectra of the SiNWs showed that all samples had more than one emission band. The emission band location and shape were found to be dependent on catalyst thickness. The Raman spectra of the prepared nanowires showed that the first order transverse band shifted toward lower frequencies compared with the c-Si band location.

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Collaboration types
Domestic collaboration
International collaboration
Citation topics
5 Physics
5.31 Silicon Systems
5.31.937 Silicon Nanowires
Web Of Science research areas
Nanoscience & Nanotechnology
Physics, Condensed Matter
ESI research areas
Physics
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