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Semi-quantitative methods for studying disorder and hydrogenation in hydrogenated amorphous silicon using Auger lineshape analysis
Journal article   Peer reviewed

Semi-quantitative methods for studying disorder and hydrogenation in hydrogenated amorphous silicon using Auger lineshape analysis

C.P. Lund, C. Klauber, P.J. Jennings, J.C.L. Cornish, B.W. Clare and G. Hefter
Applied Surface Science, Vol.115(3), pp.252-266
1997
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Abstract

Simple methods have been developed to enable the X-ray excited silicon L2,3VV, and the experimentally more difficult L1L2,3V, Auger spectra to be treated routinely using numerical debroadening and deconvolution to obtain an indication of the valence band transition densities of states for the surface. A method based on the simplex algorithm has then been applied to enable both the Si L2,3VV and Si L1L2,3V spectra to be decomposed (decoupled) into their component (pp-, sp- and ss-like) peaks. Changes in these components have been compared before and after disordering and hydrogenation of the surface to quantitatively probe the effect of these treatments on the surface valence band densities of states. It is shown that both the L2,3VV and L1L2,3V lines give a simple semi-quantitative method for monitoring hydrogen incorporation in hydrogenated amorphous silicon. Examples of these methods applied to artificially and naturally hydrogenated amorphous silicon surfaces are presented to illustrate their usefulness for studying materials fabricated for use in solar cells.

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