Journal article
Spectroellipsometric characterization of thin silicon nitride films
Thin Solid Films, Vol.313-14(1-2), pp.298-302
1998
Abstract
An empirical dielectric function (EDF) has been used to represent the spectra in the effective optical constants of Si-rich nitride (SiNx) thin films processed by PECVD. A good correlation was found between the EDF parameters and the film composition results from Auger spectroscopy. It is shown that the EDF approach allows one to use a simple optical model of the film stack and extrapolate the spectra in the optical constants of SiNx outside the measured wavelength range. This advantage gives a feasibility of using the EDF to characterize optical properties of thin films in the Deep-UV region, below 230 nm, which is outside the spectral range of most commercial ellipsometers.
Details
- Title
- Spectroellipsometric characterization of thin silicon nitride films
- Authors/Creators
- Z-T Jiang (Author/Creator) - Shizuoka UniversityT. Yamaguchi (Author/Creator) - Shizuoka UniversityM. Aoyama (Author/Creator) - Shizuoka UniversityY. Nakanishi (Author/Creator) - Shizuoka UniversityL. Asinovsky (Author/Creator) - Rudolph Technologies, Inc.
- Publication Details
- Thin Solid Films, Vol.313-14(1-2), pp.298-302
- Publisher
- Elsevier BV
- Identifiers
- 991005540305507891
- Copyright
- 1998 Elsevier Science S.A.
- Murdoch Affiliation
- Murdoch University
- Language
- English
- Resource Type
- Journal article
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InCites Highlights
These are selected metrics from InCites Benchmarking & Analytics tool, related to this output
- Collaboration types
- International collaboration
- Citation topics
- 5 Physics
- 5.31 Silicon Systems
- 5.31.186 Silicon Nanostructures
- Web Of Science research areas
- Materials Science, Coatings & Films
- Materials Science, Multidisciplinary
- Physics, Applied
- Physics, Condensed Matter
- ESI research areas
- Materials Science