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Spectroscopic ellipsometry of TaNx and VN films
Journal article   Peer reviewed

Spectroscopic ellipsometry of TaNx and VN films

J. Mistrik, K. Takahashi, R. Antos, M. Aoyama, T. Yamaguchi, Y. Anma, Y. Fukuda, M.B. Takeyama, Z-T Jiang, S. Thurgate, …
Thin Solid Films, Vol.455-56, pp.473-477
2004
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Abstract

We report on spectro-ellipsometric investigations of reactively sputtered tantalum nitride (TaNx/SiO2) and vanadium nitride (VN/Si) films. Several TaNx layers with different deposition temperatures (200–400 °C) and a VN layer were prepared optically thick and analyzed using the bulk formula. For thin TaNx layers prepared with the same temperatures as thick layers, the Drude–Lorentz parameterization of dielectric functions was used by simultaneous fitting of ellipsometric and optical transmittance spectra. VN pseudo-dielectric functions show strong metallic character, which is typical for other transition metal nitrides. In contrast, the TaNx dielectric constants obtained here range from a metallic to a non-metallic character depending on substrate temperature, but independent of the film thickness. This substrate temperature dependence may be due to multiple phases in the TaNx films.

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Collaboration types
Domestic collaboration
International collaboration
Citation topics
5 Physics
5.188 Deposition, Hardening & Coating
5.188.318 Nitride Coatings
Web Of Science research areas
Materials Science, Coatings & Films
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
ESI research areas
Materials Science
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