Journal article
Studies of photodegradation in hydrogenated amorphous silicon
Thin Solid Films, Vol.288(1-2), pp.76-82
1996
Abstract
IR absorption spectroscopy was used to study light-induced structural changes in hydrogenated amorphous silicon (a-Si:H) films. Our results suggest that illumination causes migration of H atoms from the interior of the film towards the illuminated surface. As a consequence, a transformation occurs in the bulk of the material leading to the formation of dangling bonds in the i-layer which could act as traps for minority carriers in solar cells. Using these results, we have formulated a model for the photodegradation of a-Si:H alloys.
Details
- Title
- Studies of photodegradation in hydrogenated amorphous silicon
- Authors/Creators
- B.W. Clare (Author/Creator)J.C.L. Cornish (Author/Creator)G. Hefter (Author/Creator)P.J. Jennings (Author/Creator)C.P. Lund (Author/Creator)D.J. Santjojo (Author/Creator)M.O.G. Talukder (Author/Creator)
- Publication Details
- Thin Solid Films, Vol.288(1-2), pp.76-82
- Publisher
- Elsevier BV
- Identifiers
- 991005540261007891
- Murdoch Affiliation
- School of Mathematical and Physical Sciences
- Language
- English
- Resource Type
- Journal article
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