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Surface barrier in W(110). II. Low-energy electron diffraction fine-structure analysis
Journal article   Open access   Peer reviewed

Surface barrier in W(110). II. Low-energy electron diffraction fine-structure analysis

P.J. Jennings and R.O. Jones
Physical Review B, Vol.34(10), pp.6699-6703
1986
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Abstract

High-resolution experimental data for the low-energy electron diffraction fine structure in W(110) are analyzed using a one-dimensional model potential barrier used previously for W(001). The measured fine structure is reproduced very well for both surfaces, and the optimum barriers are similar. The position of the image plane in W(110), however, is approximately 0.2–0.3 a.u. farther from the outermost layer of atoms than in W(001). This is in good agreement with the results of self-consistent electronic-structure calculations reported by Jepsen and Jones in the preceding paper.

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Domestic collaboration
International collaboration
Citation topics
5 Physics
5.31 Silicon Systems
5.31.871 Silicon Surface Chemistry
Web Of Science research areas
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
ESI research areas
Physics
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