Journal article
Thin film silicon nanowire photovoltaic devices produced with gold and tin catalysts
Journal of Nanoparticle Research, Vol.13(10), pp.4431-4436
2011
Abstract
Silicon nanowires produced using pulsed plasma-enhanced chemical vapor deposition have been used as part of a thin film photovoltaic device. Nanowires of differing morphologies were produced by using both gold and tin thin films as a catalyst for growth. A prototype silicon nanowire-based thin-film photovoltaic device was produced by using doped silicon nanowires as the p-layer. Amorphous silicon was used as the intrinsic and n-layers of the device. The nanowires used in the photovoltaic devices had an average diameter of 420 nm after the deposition and coating of amorphous silicon intrinsic and n-layers. The nanowires were deposited in bulk as films of 3 to 42 mu m in thickness. The resulting device, although of low efficiency, had a demonstrable photocurrent. Tin-catalyzed nanowires were found to produce a thin-film device with a measurable photocurrent whereas gold-catalyzed silicon nanowires did not. This was attributed to the length of the nanowires and thickness of the p-layer produced when using gold-catalyzed nanowires.
Details
- Title
- Thin film silicon nanowire photovoltaic devices produced with gold and tin catalysts
- Authors/Creators
- D. Parlevliet (Author/Creator) - Murdoch UniversityP. Jennings (Author/Creator) - Murdoch University
- Publication Details
- Journal of Nanoparticle Research, Vol.13(10), pp.4431-4436
- Publisher
- Springer Verlag
- Identifiers
- 991005542036907891
- Copyright
- © Springer-Verlag 2011
- Murdoch Affiliation
- School of Engineering and Energy
- Language
- English
- Resource Type
- Journal article
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- Citation topics
- 5 Physics
- 5.31 Silicon Systems
- 5.31.937 Silicon Nanowires
- Web Of Science research areas
- Chemistry, Multidisciplinary
- Materials Science, Multidisciplinary
- Nanoscience & Nanotechnology
- ESI research areas
- Materials Science